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PD- 91802A
IRF7353D1
FETKYTM MOSFET / Schottky Diode
Co-packaged HEXFET(R) Power MOSFET and Schottky Diode q Ideal For Buck Regulator Applications q N-Channel HEXFET q Low VF Schottky Rectifier q Generation 5 Technology q SO-8 Footprint Description
q
A A S G
1 8
K K D D
VDSS = 30V RDS(on) = 0.029 Schottky Vf = 0.39V
2
7
3
6
4
5
T op V ie w
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.
S O -8
Absolute Maximum Ratings (TA = 25C unless otherwise noted)
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Maximum
6.5 5.2 52 2.0 1.3 16 20 -5.0 -55 to +150
Units
A
W mW/C V V/ns C
Thermal Resistance Ratings
Parameter
RJA Junction-to-Ambient Notes: Repetitive rating; pulse width limited by maximum junction temperature (see figure 9) Starting TJ = 25C, L = 10mH, RG = 25, IAS = 4.0A ISD 4.0A, di/dt 74A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2% Surface mounted on FR-4 board, t 10sec.
Maximum
62.5
Units
C/W
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3/17/99
IRF7353D1
MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Min. -- -- -- -- -- Typ. -- 0.023 0.032 -- 14 -- -- -- -- 22 2.6 6.4 8.1 8.9 26 17 650 320 130 Max. Units Conditions -- V V GS = 0V, ID = 250A 0.032 VGS = 10V, ID = 5.8A 0.046 VGS = 4.5V, ID = 4.7A -- V VDS = VGS, ID = 250A -- S VDS = 24V, ID = 5.8A 1.0 VDS = 24V, VGS = 0V A 25 VDS = 24V, VGS = 0V, TJ = 55C 100 VGS = 20V nA -100 V GS = -20V 33 ID = 5.8A 3.9 nC VDS = 24V 9.6 VGS = 10V (see figure 8) 12 VDD = 15V 13 ID = 1.0A ns 39 RG = 6.0 26 R D = 15 -- VGS = 0V -- pF VDS = 25V -- = 1.0MHz (see figure 7) Conditions
MOSFET Source-Drain Ratings and Characteristics
Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Body Diode Forward Voltage trr Reverse Recovery Time (Body Diode) Qrr Reverse Recovery Charge Typ. Max. Units -- 2.5 A -- 30 0.78 1.0 V 45 68 ns 58 87 nC
TJ = 25C, IS = 1.7A, VGS = 0V TJ = 25C, IF = 1.7A di/dt = 100A/s
Schottky Diode Maximum Ratings
IF(av)
ISM
Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current
Max. Units. 2.7 A 1.9 120 11 A
Conditions 50% Duty Cycle. Rectangular Wave, TA = 25C See Fig. 14 TA = 70C 5s sine or 3s Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with VRRM applied
Schottky Diode Electrical Specifications
VFM Parameter Max. Forward voltage drop Max. Units 0.50 0.62 V 0.39 0.57 0.06 mA 16 92 pF 3600 V/ s Conditions IF = 1.0A, TJ = 25C IF = 2.0A, TJ = 25C IF = 1.0A, TJ = 125C IF = 2.0A, TJ = 125C . VR = 30V TJ = 25C TJ = 125C VR = 5Vdc ( 100kHz to 1 MHz) 25C Rated VR
IRM Ct dv/dt
Max. Reverse Leakage current Max. Junction Capacitance Max. Voltage Rate of Charge
2
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IRF7353D1
Power Mosfet Characteristics
100
TOP VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
100
TOP
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
10
3.0V
3.0V
1 0.1 1
20s PULSE WIDTH TJ = 25C A
10
1 0.1 1
20s PULSE WIDTH TJ = 150C A
10
V D S , Drain-to-Source Voltage (V)
V D S , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
ID = 5.8A
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
TJ = 25C T J = 150C
10
1.5
1.0
0.5
1 3.0 3.5 4.0
V D S = 10V 20s PULSE WIDTH
4.5 5.0
A
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
V G S , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7353D1
Power Mosfet Characteristics
RDS (on) , Drain-to-Source On Resistance ()
0.040
0.036
V G S = 4.5V
RDS (on) , Drain-to-Source On Resistance ()
0.12
0.10
0.08
0.032
0.06
0.028
I D = 5.8A
0.04
0.024
V G S = 10V
0.02
0.020 0 10 20 30 40
A
0.00 0 3 6 9 12 15
A
I D , Drain Current (A)
V G S , Gate-to-Source Voltage (V)
Fig 5. Typical On-Resistance Vs. Drain Current
1200
Fig 6. Typical On-Resistance Vs. Gate Voltage
20
VGS , Gate-to-Source Voltage (V)
V GS C is s C rs s C o ss
= = = =
0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd
ID = 5.8A VDS = 15V
16
C , Capacitance (pF)
900
C iss C oss
12
600
8
300
C rss
4
0 1 10 100
A
0 0 10 20 30 40
V D S , D rain-to-S ourc e V oltage (V )
QG , Total Gate Charge (nC)
Fig 7. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 8. Typical Gate Charge Vs. Gate-to-Source Voltage
4
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IRF7353D1
Power Mosfet Characteristics
100
Thermal Response (Z thJA )
D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 P DM
0.1 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
I S D , Reverse Drain Current (A)
T J = 150C
10
TJ = 25C
1 0.4 0.6 0.8 1.0 1.2
V G S = 0V
1.4
A
1.6
V S D , Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
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IRF7353D1
Schottky Diode Characteristics
10
100
Reverse Current - IR (mA)
10
TJ = 150C 125C
1
100C 75C 50C
0.1
In s ta n ta n e o u s F o rw a rd C u r re n t - I F (A )
0.01
25C
0.001
0.0001 0 5 10 15 20 25 30
)
Reverse Voltage - V R (V)
1
T J = 1 5 0 C T J = 1 2 5 C TJ = 2 5C
Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage
A llow able A m b ient Tem p era ture - (C )
160 140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 D D D D D = 3 /4 = 1 /2 = 1 /3 = 1 /4 = 1 /5 V r = 8 0 % R ated R t hJA = 6 2 .5 C /W Sq u are w ave
0.1 0.0 0.2 0.4 0.6 0.8 1.0
DC
F o rw a rd V o lta g e D ro p - V F M (V ) Forward Voltage Drop - VF (V)
Fig. 12 -Typical Forward Voltage Drop Characteristics
A
A v era ge F orw ard C urrent - I F (AV ) (A )
Fig.14 - Maximum Allowable Ambient Temp. Vs. Forward Current
6
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IRF7353D1
SO-8 Package Details
D -B -
D IM
5
IN C H E S M IN .0532 .0040 .014 .0 075 .1 89 .150 MAX .0688 .0098 .018 .0 098 .1 96 .157
M IL LIM E T E R S M IN 1 .35 0 .10 0 .36 0 .19 4 .80 3 .81 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99
A A1 B
5
8 E -A -
7
6
5 H 0.2 5 (.0 10 ) M AM
1
2
3
4
C D E e e1 H K
e 6X
e1 A
K x 45
.050 B A S IC .025 B A S IC .2 284 .011 0 .16 0 .2 440 .019 .050 8
1.2 7 B A S IC 0.6 35 B A S IC 5 .80 0 .28 0 .41 0 6.20 0 .48 1.27 8
-CB 8X 0 .25 (.01 0) A1 M CASBS
0 .10 (.00 4)
L 8X
6
C 8X
L
R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X
N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
6 .46 ( .25 5 )
1 .78 (.07 0) 8X
1.27 ( .0 50 ) 3X
Part Marking
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IRF7353D1
Tape and Reel
T E R M IN A L N U M B E R 1
12 .3 ( .484 ) 11 .7 ( .461 )
8.1 ( .31 8 ) 7.9 ( .31 2 )
F E E D D IR E C T IO N
N OTE S : 1 . C ON TR O LL IN G D IM E N S ION : M IL LIM E TE R. 2 . A L L D IM E N S ION S A RE S H O W N IN M IL L IM E TE R S (INC H E S ). 3 . O U TL IN E C O N FO R M S TO E IA -4 81 & E IA -54 1 .
33 0.00 (12 .992 ) M AX .
14.4 0 ( .5 66 ) 12.4 0 ( .4 88 ) NOTES : 1. C O N T R O LLIN G D IM E N S IO N : M ILL IM E T E R . 2. O U T LIN E C O N F O R M S T O E IA -481 & E IA -541.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 3/99
8
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